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Journal Of Computational ElectronicsSCIE

國(guó)際簡(jiǎn)稱(chēng)：J COMPUT ELECTRON 參考譯名：計(jì)算電子學(xué)雜志

中科院分區(qū)
4區(qū)
CiteScore分區(qū)
Q2
JCR分區(qū)
Q3

基本信息：: ISSN：1569-8025; E-ISSN：1572-8137; 是否OA：未開(kāi)放; 是否預(yù)警：否; TOP期刊：否

出版信息：: 出版地區(qū)：UNITED STATES; 出版商：Springer US; 出版語(yǔ)言：English; 出版周期：6 issues per year; 出版年份：2002; 研究方向：ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

評(píng)價(jià)信息：: 影響因子：2.2; H-index：27; CiteScore指數(shù)：4.5; SJR指數(shù)：0.294; SNIP指數(shù)：0.824

發(fā)文數(shù)據(jù)：: Gold OA文章占比：8.61%; 研究類(lèi)文章占比：100.00%; 年發(fā)文量：117; 自引率：0.0476...; 開(kāi)源占比：0.0676; 出版撤稿占比：0.0053...; 出版國(guó)人文章占比：0.08; OA被引用占比：0.025

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英文簡(jiǎn)介期刊介紹 CiteScore數(shù)據(jù) 中科院SCI分區(qū) JCR分區(qū) 發(fā)文數(shù)據(jù) 常見(jiàn)問(wèn)題

英文簡(jiǎn)介Journal Of Computational Electronics期刊介紹

he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.

In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.

期刊簡(jiǎn)介Journal Of Computational Electronics期刊介紹

《Journal Of Computational Electronics》自2002出版以來(lái)，是一本工程技術(shù)優(yōu)秀雜志。致力于發(fā)表原創(chuàng)科學(xué)研究結(jié)果，并為工程技術(shù)各個(gè)領(lǐng)域的原創(chuàng)研究提供一個(gè)展示平臺(tái)，以促進(jìn)工程技術(shù)領(lǐng)域的的進(jìn)步。該刊鼓勵(lì)先進(jìn)的、清晰的闡述，從廣泛的視角提供當(dāng)前感興趣的研究主題的新見(jiàn)解，或?qū)彶槎嗄陙?lái)某個(gè)重要領(lǐng)域的所有重要發(fā)展。該期刊特色在于及時(shí)報(bào)道工程技術(shù)領(lǐng)域的最新進(jìn)展和新發(fā)現(xiàn)新突破等。該刊近一年未被列入預(yù)警期刊名單，目前已被權(quán)威數(shù)據(jù)庫(kù)SCIE收錄，得到了廣泛的認(rèn)可。

該期刊投稿重要關(guān)注點(diǎn)：

預(yù)計(jì)審稿時(shí)間： 12周，或約稿
工程技術(shù)
ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
中科院4區(qū)
非預(yù)警

Cite Score數(shù)據(jù)（2024年最新版）Journal Of Computational Electronics Cite Score數(shù)據(jù)

CiteScore：4.5
SJR：0.294
SNIP：0.824

學(xué)科類(lèi)別	分區(qū)	排名	百分位
大類(lèi)：Mathematics 小類(lèi)：Modeling and Simulation	Q2	89 / 324	72%
大類(lèi)：Mathematics 小類(lèi)：Electrical and Electronic Engineering	Q2	295 / 797	63%
大類(lèi)：Mathematics 小類(lèi)：Atomic and Molecular Physics, and Optics	Q2	91 / 224	59%
大類(lèi)：Mathematics 小類(lèi)：Electronic, Optical and Magnetic Materials	Q2	121 / 284	57%

CiteScore 是由Elsevier(愛(ài)思唯爾)推出的另一種評(píng)價(jià)期刊影響力的文獻(xiàn)計(jì)量指標(biāo)。反映出一家期刊近期發(fā)表論文的年篇均引用次數(shù)。CiteScore以Scopus數(shù)據(jù)庫(kù)中收集的引文為基礎(chǔ)，針對(duì)的是前四年發(fā)表的論文的引文。CiteScore的意義在于，它可以為學(xué)術(shù)界提供一種新的、更全面、更客觀地評(píng)價(jià)期刊影響力的方法，而不僅僅是通過(guò)影響因子(IF)這一單一指標(biāo)來(lái)評(píng)價(jià)。

歷年Cite Score趨勢(shì)圖

中科院SCI分區(qū)Journal Of Computational Electronics 中科院分區(qū)

中科院 2023年12月升級(jí)版 綜述期刊：否 Top期刊：否

大類(lèi)學(xué)科	分區(qū)	小類(lèi)學(xué)科	分區(qū)
工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 PHYSICS, APPLIED 物理：應(yīng)用	4區(qū) 4區(qū)

中科院分區(qū)表 是以客觀數(shù)據(jù)為基礎(chǔ)，運(yùn)用科學(xué)計(jì)量學(xué)方法對(duì)國(guó)際、國(guó)內(nèi)學(xué)術(shù)期刊依據(jù)影響力進(jìn)行等級(jí)劃分的期刊評(píng)價(jià)標(biāo)準(zhǔn)。它為我國(guó)科研、教育機(jī)構(gòu)的管理人員、科研工作者提供了一份評(píng)價(jià)國(guó)際學(xué)術(shù)期刊影響力的參考數(shù)據(jù)，得到了全國(guó)各地高校、科研機(jī)構(gòu)的廣泛認(rèn)可。

中科院分區(qū)表 將所有期刊按照一定指標(biāo)劃分為1區(qū)、2區(qū)、3區(qū)、4區(qū)四個(gè)層次，類(lèi)似于“優(yōu)、良、及格”等。最開(kāi)始，這個(gè)分區(qū)只是為了方便圖書(shū)管理及圖書(shū)情報(bào)領(lǐng)域的研究和期刊評(píng)估。之后中科院分區(qū)逐步發(fā)展成為了一種評(píng)價(jià)學(xué)術(shù)期刊質(zhì)量的重要工具。

歷年中科院分區(qū)趨勢(shì)圖

JCR分區(qū)Journal Of Computational Electronics JCR分區(qū)

2023-2024 年最新版

按JIF指標(biāo)學(xué)科分區(qū)	收錄子集	分區(qū)	排名	百分位
學(xué)科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	183 / 352	48.2%
學(xué)科：PHYSICS, APPLIED	SCIE	Q3	104 / 179	42.2%

按JCI指標(biāo)學(xué)科分區(qū)	收錄子集	分區(qū)	排名	百分位
學(xué)科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	190 / 354	46.47%
學(xué)科：PHYSICS, APPLIED	SCIE	Q3	100 / 179	44.41%

JCR分區(qū)的優(yōu)勢(shì)在于它可以幫助讀者對(duì)學(xué)術(shù)文獻(xiàn)質(zhì)量進(jìn)行評(píng)估。不同學(xué)科的文章引用量可能存在較大的差異，此時(shí)單獨(dú)依靠影響因子(IF)評(píng)價(jià)期刊的質(zhì)量可能是存在一定問(wèn)題的。因此，JCR將期刊按照學(xué)科門(mén)類(lèi)和影響因子分為不同的分區(qū)，這樣讀者可以根據(jù)自己的研究領(lǐng)域和需求選擇合適的期刊。

歷年影響因子趨勢(shì)圖

發(fā)文數(shù)據(jù)

2023-2024 年國(guó)家/地區(qū)發(fā)文量統(tǒng)計(jì)

國(guó)家/地區(qū)數(shù)量
India191
Iran91
CHINA MAINLAND52
USA50
Algeria36
Saudi Arabia20
Bangladesh16
GERMANY (FED REP GER)13
Pakistan11
Tunisia11

本刊中國(guó)學(xué)者近年發(fā)表論文

1、Exploring the electrical performance of advanced and environmental-friendly novel nanomaterial wires in generator winding through finite element analysis
Author: Hassan, Atazaz; Chen Quanfang; Abbas, Sajid; Akbar, Hussain; Luo Youming; Liu Jie

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 17-28. DOI: 10.1007/s10825-022-01965-y
2、Ab-initio characterization of iron-embedded nitrogen-doped graphene as a toxic gas sensor
Author: Nosheen, Uzma; Jalil, Abdul; Ilyas, Syed Zafar; Ahmed, Sarfraz; Illahi, Ahsan; Rafiq, Muhammad Aftab

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 116-127. DOI: 10.1007/s10825-022-01977-8
3、Efficient modeling approach for simulating multi-physics responses of an ion-sensitive field-effect transistor using artificial neural networks
Author: Xie, Jianan; Zhou, Yuanguo; Liang, Bingyang; Ren, Qiang; Javaid, Fawad

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 242-249. DOI: 10.1007/s10825-022-01979-6
4、Critical parameters of gate control in NC-FinFET on GaAs
Author: Li, Henghui; Jia, Tingting; Zhang, Chong; Yu, Ziwei; Guo, Quansheng; Zhao, Hongyang; Jia, Chunyang; Yu, Shuhui; Sun, Rong

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 164-177. DOI: 10.1007/s10825-022-01957-y
5、Velocity-field characteristics of MgxZn1-xO/ZnO heterostructures
Author: Liu, DongFeng

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 2, pp. 603-611. DOI: 10.1007/s10825-022-01999-2
6、Storm surge level prediction based on improved NARX neural network
Author: Li, Lianbo; Wu, Wenhao; Zhang, Wenjun; Zhu, Zhenyu; Li, Zhengqian; Wang, Yihan; Niu, Sen

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 2, pp. 783-804. DOI: 10.1007/s10825-023-02005-z
7、Ultrahigh FOM and multiple Fano resonances in MIM waveguide systems with half-ring and rectangular cavities
Author: Wang, Yunyan; Huo, Yiping; Cui, Pengfei; Song, Meina; Zhao, Chen; Liao, Zuxiong; Liu, Tong; Zhang, Zhongyue; Xie, You

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 3, pp. 839-848. DOI: 10.1007/s10825-023-02022-y
8、Nonlocalization of singular potentials in quantum dynamics
Author: Shao, Sihong; Su, Lili

Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. , Issue , pp. -. DOI: 10.1007/s10825-023-02042-8